Data sheets

Infrared detectors

IR-detectors inside a TO- or BNC-cover

IR-detectors inside a TO- or BNC-cover

IR-detectors with a four-stage cooling

IR-detectors with a four-stage cooling

PEM-detector, time constant ca. 0.2 ns

PEM-detector, time constant ca. 0.2 ns

Explanation to the VIGO IR-detector program

 

In relation to the used materials the detectors are subdivided

  • HgCdTe  (often abbreviated as MCT)
  • InAs and InAsSb-Detectors

According to the  classification of the semiconductors in the periodic table of the elements one speaks about detectors from II-VI-semiconductors (Hg, Cd, Te) and  III-V-semiconductors (In, As, Sb)

In relation to the functional principle the detectors can be divided into three groups 

  • PV – Photo-Voltaic
  • PEM – Photo-Electro-Magnetic
  • PC – Photo Conductor

In relation to the cooling the detectors are divided into two groups, the room temperature detectors and the detectors with a 2, 3 or 4 stage thermoelectric cooling (named with 2TE, 3TE or 4TE)

In addition the letters „M“ and „I“ are used in the detector types.

M for Multiple Junction:  A multiple of serial  p-n-transitions increases the responsivity of the detectors and make it possible to produce long wave length detectors with larger areas.

I for optical Immersion: The principle of optical immersion decreases the electric area in relation to the optical area with resulting improved noise parameter of the detector

 

Uncooled Detectors

Photovoltaic Infrared-Detectors made from HgCdTe

Photocurrent Infrared-Detectors made from HgCdTe

Photovoltaic Infrared-Detectors made from InAs / InAsSb

  • Serie PVA (3 – 8 µm)
  • Serie PVIA (3 – 8 µm)

Photoelectromagnetic Infrared-Detectors made from HgCdTe

TE cooled detectors

Photovoltaic Infrared-Detectors made from HgCdTe

Photovoltaic Infrared-Detectors made from InAs / InAsSb

  • Serie PVA-2TE (3 – 8 µm)
  • Serie PVIA-2TE (3 – 8 µm)

Photocurrent Infrared-Detectors made from HgCdTe

Quadrant detectors and Arrays

Quadrant-Detectors made from HgCdTe

  • Serie PCQ (3 – 8 µm)
  • Serie PVQ (8 – 11 µm)
  • Serie PVMQ (8 – 11 µm)
Arrays

  • HgCdTe and InAsSb Arrays (3 – 14 µm)